A Review of the Synthesis, Properties, and Applications of Bulk and Two-Dimensional Tin (II) Sulfide (SnS)

Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV orthorhombic polymorph, and a band gap 1.5–1.7 the cubic polymorph—both which are commensurate with efficient light harvesting, combined high absorption coefficient (10−4 cm−1) across NIR–visible region electromagnetic spectrum, leading theoretical power efficiencies >30%. The natural abundance relative lack toxicity constituent elements means that such could potentially be inexpensive, sustainable, accessible most nations. SnS exists form as layer structure similar black phosphorus; therefore, can tuned by thinning material nanoscale dimensions. These other properties enable applications optoelectronic (photovoltaics, photodetectors), lithium- sodium-ion batteries, sensors among others significant potential variety future applications. synthetic routes, structural, optical electronic well their (in particular photonic storage) bulk 2D tin(II) reviewed herein.